Analysis of LDMOS-SCR ESD protection device for 60V SOI BCD technology

• Published in: 2010 IEEE International Conference of Electron Devices and Solid-State Circuits pp. 1 - 4
• Main Authors: Peng Zhang, Yuan Wang, Song Jia, Xing Zhang
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.12.2010
• Subjects: Anodes; LDMOS-SCR; Robustness; SOI BCD Technology; triggering-voltage

A study of two major types of LDMOS-SCR electrostatic discharge protection devices for 60V SOI BCD technology is presented. The difference of the P-anode implant positions influences the triggering mechanism of the two types of devices. The relationship between I-V behavior under ESD and the device...