Analysis of LDMOS-SCR ESD protection device for 60V SOI BCD technology

A study of two major types of LDMOS-SCR electrostatic discharge protection devices for 60V SOI BCD technology is presented. The difference of the P-anode implant positions influences the triggering mechanism of the two types of devices. The relationship between I-V behavior under ESD and the device...

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Bibliographic Details
Published in2010 IEEE International Conference of Electron Devices and Solid-State Circuits pp. 1 - 4
Main Authors Peng Zhang, Yuan Wang, Song Jia, Xing Zhang
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.12.2010
Subjects
Anodes
LDMOS-SCR
Robustness
SOI BCD Technology
triggering-voltage
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Summary:A study of two major types of LDMOS-SCR electrostatic discharge protection devices for 60V SOI BCD technology is presented. The difference of the P-anode implant positions influences the triggering mechanism of the two types of devices. The relationship between I-V behavior under ESD and the device parameter is studied. Heat dissipation capability of the device is also presented.
ISBN:9781424499977
1424499976
DOI:10.1109/EDSSC.2010.5713671