Electrical transport in carbon nanotube intermolecular p-n junctions

Thermionic emission and tunneling are found to be the dominant transport mechanisms under the forward and reverse bias conditions, respectively, in a single-walled carbon nanotube based intermolecular p-n junction. At a reverse bias, the kink point on the plot of ln(I/V 2 ) vs 1/V indicates that the...

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Bibliographic Details
Published inThe 4th IEEE International NanoElectronics Conference pp. 1 - 2
Main Authors Hong Li, Qing Zhang, Chin Chong Yap, Beng Kang Tay
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2011
Subjects
Carbon nanotubes
Electrodes
Fitting
intermolecular p-n junction
P-n junctions
Thermionic emission
transport mechanism
Tunneling
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Summary:Thermionic emission and tunneling are found to be the dominant transport mechanisms under the forward and reverse bias conditions, respectively, in a single-walled carbon nanotube based intermolecular p-n junction. At a reverse bias, the kink point on the plot of ln(I/V 2 ) vs 1/V indicates that the transport mechanism experiences a transition from direct tunneling to the Fowler-Nordheim tunneling through the junction barrier. In contrast, the Arrhenius plot of the I-V curve at forward biases shows that tunneling dominates over the thermionic emission below 50 K.
ISBN:1457703793
9781457703799
ISSN:2159-3523
DOI:10.1109/INEC.2011.5991794