Formation of High Quality Strained-Si / Strained-SiGe Layers Grown on Relaxed SiGe Virtual Substrates for Advanced CMOS Application

In this work, we have fabricated 8-inch SiGe wafers with the dual channel through a direct production line and the samples were mostly characterized by the line equipment. Some characteristic methods and vital specification were presented for device makers

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Bibliographic Details
Published in2006 International SiGe Technology and Device Meeting pp. 1 - 2
Main Authors In-kyum Kim, Suk-june Kang, Hyung-sang Yuk, Dong-kun Lee, Bo-young Lee
Format Conference Proceeding
LanguageEnglish
Published IEEE 2006
Subjects
Charge carrier processes
CMOS technology
Electron mobility
Germanium silicon alloys
Impurities
Mass production
Rough surfaces
Silicon germanium
Substrates
Surface roughness
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Summary:In this work, we have fabricated 8-inch SiGe wafers with the dual channel through a direct production line and the samples were mostly characterized by the line equipment. Some characteristic methods and vital specification were presented for device makers
ISBN:9781424404612
1424404614
DOI:10.1109/ISTDM.2006.246490