Analysis of the Effect of Field Enhancement at Fin Corners on Program Characteristics of FinFET Split-Gate MONOS

The effect of field enhancement at Fin corners on program characteristics of FinFET Split-gate metal oxide nitride oxide silicon (SG-MONOS) is analyzed. The program characteristics using source-side injection (SSI) are found to be insensitive to the variation of the curvature radius at Fin corners,...

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Published in2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) pp. 194 - 197
Main Authors Sonoda, Kenichiro, Tsukuda, Eiji, Tsuda, Shibun, Hayashi, Tomohiro, Akiyama, Yutaka, Yamaguchi, Yasuo, Yamashita, Tomohiro
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.09.2018
Subjects
FinFET
MONOS
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Summary:The effect of field enhancement at Fin corners on program characteristics of FinFET Split-gate metal oxide nitride oxide silicon (SG-MONOS) is analyzed. The program characteristics using source-side injection (SSI) are found to be insensitive to the variation of the curvature radius at Fin corners, which shows the robustness of FinFET SG-MONOS to Fin shape variation inthe fabrication process.
ISSN:1946-1577
DOI:10.1109/SISPAD.2018.8551742