Ambient gas control in slot-to-slot space inside FOUP to suppress Cu-loss after dual damascene patterning

We investigated a Cu-loss problem after dual-damascene patterning during manufacturing; that is, more than a dozen wafers were stored in a FOUP. We found that a decreased yield due to the Cu-loss strongly depends on the wafer position in a FOUP and on the queue time between etching and wet cleaning....

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Bibliographic Details
Published in2007 International Symposium on Semiconductor Manufacturing pp. 1 - 4
Main Authors Kamoshima, T., Fujii, Y., Noguchi, T., Saeki, T., Takata, Y., Ochi, H., Koiwa, A.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.10.2007
Subjects
Cleaning
Oxidation
Paper technology
Pulp manufacturing
Reliability engineering
Semiconductor device manufacture
Semiconductor device modeling
Space technology
Testing
Wet etching
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Summary:We investigated a Cu-loss problem after dual-damascene patterning during manufacturing; that is, more than a dozen wafers were stored in a FOUP. We found that a decreased yield due to the Cu-loss strongly depends on the wafer position in a FOUP and on the queue time between etching and wet cleaning. We developed a Cu-oxidation model to explain what happens during the queue time; that is, the F content, which catalyze Cu-oxidation, in the post-etch residue gradually evaporate into the slot-to-slot space. On the basis of our model, we applied ambient gas control in the slot-to-slot space to suppress the decrease in yield due to the Cu-loss.
ISBN:1424411416
9781424411412
ISSN:1523-553X
DOI:10.1109/ISSM.2007.4446864