Effect of single HALO doped channel in Tunnel FETs: A 2-D modeling study

• Published in: 2010 IEEE International Conference of Electron Devices and Solid-State Circuits pp. 1 - 4
• Main Authors: Syamal, B, Bose, C, Sarkar, C K, Mohankumar, N
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.12.2010
• Subjects: Depletion Width; Halo Doping; Junctions; Semiconductor process modeling; Solid modeling; Solids; Surface Potential; Tunnel FETs; Tunneling; Tunneling Junction

Tunnel FETs has emerged as a promising candidate to replace the conventional CMOS technology in the near future owing to its sub-60 mV/dec subthreshold slope. In this paper we have explored the effects of asymmetric channel doping in Tunnel FET devices through extensive modeling and simulation appro...