Highly Reliable 256Mb PRAM with Advanced Ring Contact Technology and Novel Encapsulating Technology

Advanced ring type technology and encapsulating scheme were developed to fabricate highly manufacturable and reliable 256Mb PRAM. Very uniform BEC area was prepared by the advanced ring type technology in which core dielectrics were optimized for cell contact CMP process. In addition, relatively hig...

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Published in2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers pp. 118 - 119
Main Authors Song, Y.J., Ryoo, K.C, Hwang, Y.N., Jeong, C.W., Lim, D.W., Park, S.S., Kim, J.I., Kim, J.H., Lee, S.Y., Kong, J., Ahn, S., Lee, S.H., Park, J.H., Oh, J.H., Oh, Y.T., Kim, J.S., Shin, J., Park, J., Fai, Y., Koh, G., Jeong, G.T., Kim, R.H., Lim, H.S., Park, I.S., Jeong, H.S., Jeong, H., Kim, K.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2006
Subjects
Cleaning
CMOS technology
Degradation
Dielectrics
Electrodes
Manufacturing processes
Phase change random access memory
Planarization
Research and development
Tellurium
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Summary:Advanced ring type technology and encapsulating scheme were developed to fabricate highly manufacturable and reliable 256Mb PRAM. Very uniform BEC area was prepared by the advanced ring type technology in which core dielectrics were optimized for cell contact CMP process. In addition, relatively high set resistance was stabilized from encapsulating Ge 2 Sb 2 Te 5 (GST) stack with blocking layers, thus giving rise to a wide sensing window. These advanced ring type and encapsulating technologies can provide great potentials of developing high density 512Mb PRAM and beyond
ISBN:1424400058
9781424400058
ISSN:0743-1562
DOI:10.1109/VLSIT.2006.1705245