Low power technology/circuit co-development for advanced mobile devices

Technology options at 45 nm and 32/28 nm have been optimized for various mobile device applications. Disposable high performance technology is introduced to satisfy both high speed and low power requirement of modern convergence mobile computing and communication device. Dual Core Oxide scheme using...

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Bibliographic Details
Published in2010 IEEE International Conference on Integrated Circuit Design and Technology pp. 174 - 177
Main Author Yeap, Geoffrey
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2010
Subjects
28nm
Circuits
Costs
Foundries
gate last
High K dielectric materials
High performance computing
High-k
High-K gate dielectrics
HK/MG
Metal gate
Mobile communication
Mobile computing
MOSFETs
process technology
replacement metal gate process
Wireless communication
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Summary:Technology options at 45 nm and 32/28 nm have been optimized for various mobile device applications. Disposable high performance technology is introduced to satisfy both high speed and low power requirement of modern convergence mobile computing and communication device. Dual Core Oxide scheme using SiON/Poly gate stack was used in 45 nm. Scaled SiON/Poly gate stack is sufficient for 32/28 nm low power/low cost technology, while HK/MG gate stack with strong process induced stress option is needed for high performance technology.
ISBN:9781424457731
1424457734
ISSN:2381-3555
2691-0462
DOI:10.1109/ICICDT.2010.5510260