Impact of material composition on the write performance of phase-change memory devices

• Published in: 2010 IEEE International Memory Workshop pp. 1 - 4
• Main Authors: Boniardi, M, Ielmini, D, Lacaita, A L, Redaelli, A, Pirovano, A, Tortorelli, I, Allegra, M, Magistretti, M, Bresolin, C, Erbetta, D, Modelli, A, Varesi, E, Pellizzer, F, Bez, R
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.05.2010
• Subjects: Amorphous materials; chalcogenide; Composite materials; composition engineering; Crystalline materials; Crystallization; Germanium alloys; Mechanical factors; Phase change materials; Phase change memory; Tellurium; ternary-diagram; Tin alloys
• ISBN: 9781424467198; 1424467195
• ISSN: 2159-483X
• DOI: 10.1109/IMW.2010.5488329

The phase-change memory (PCM) technology represents one of the most attractive concepts for next generation data storage. PCM operation is based on the particular properties of a chalcogenide alloy, the ternary compound Ge 2 Sb 2 Te 5 , which is able to perform fast and reversible transitions between a crystalline, high-conductive phase and an amorphous, low-conductive one, thus enabling the binary data storage. Although the ternary alloy Ge 2 Sb 2 Te 5 is the best recognised solution to meet the device reliability and performance specifications, other alloys are being studied within the GeSbT e ternary compound system in order to investigate and to enlarge the possible spectrum of PCM applications. This work focuses both on the program parameters and on the write performances of a Sb-rich GST composition, suggesting a change in the physical properties of the PCM material and a transition from nucleation to growth-dominated crystallization mechanism, both controlled by the material composition engineering. This enables new challenging performance parameters.