A 65nm CMOS transceiver with integrated active cancellation supporting FDD from 1GHz to 1.8GHz at +12.6dBm TX power leakage

This paper presents an active transmitter (TX) cancellation scheme for FDD that synthesizes a replica of the TX current in shunt with the receiver (RX), virtually shorting out the TX signal for the RX while having minimal impact on TX insertion loss. The prototype in 65nm CMOS demonstrates >50dB...

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Bibliographic Details
Published in2016 IEEE Symposium on VLSI Circuits (VLSI-Circuits) pp. 1 - 2
Main Authors Ramakrishnan, Sameet, Calderin, Lucas, Puglielli, Antonio, Alon, Elad, Niknejad, Ali, Nikolic, Borivoje
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2016
Subjects
Degradation
Frequency measurement
Frequency modulation
Impedance
Noise measurement
Power generation
Radio frequency
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Summary:This paper presents an active transmitter (TX) cancellation scheme for FDD that synthesizes a replica of the TX current in shunt with the receiver (RX), virtually shorting out the TX signal for the RX while having minimal impact on TX insertion loss. The prototype in 65nm CMOS demonstrates >50dB cancellation of a +12.6dBm peak 20MHz modulated TX signal. A receiver integrated on the same prototype is able to down-convert the RX signal at 40MHz offset with <;4.3dB noise figure (NF) degradation in the presence of the residual TX.
DOI:10.1109/VLSIC.2016.7573499