Effects of RRAM Stack Configuration on Forming Voltage and Current Overshoot

The impact of the forming operation current overshoot on subsequent reset current and cycling is investigated for Metal-Oxide-based RRAM through varying of metal-oxide thickness, composition, and dielectric configuration. Reducing forming voltage by means of RRAM metal-oxide stack engineering is fou...

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Published in2011 3rd IEEE International Memory Workshop (IMW) pp. 1 - 4
Main Authors Gilmer, D C, Bersuker, G, Park, H.-Y, Park, C, Butcher, B, Wang, W, Kirsch, P D, Jammy, R
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2011
Subjects
Aluminum oxide
Dielectrics
Monitoring
Oscilloscopes
Resistance
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Summary:The impact of the forming operation current overshoot on subsequent reset current and cycling is investigated for Metal-Oxide-based RRAM through varying of metal-oxide thickness, composition, and dielectric configuration. Reducing forming voltage by means of RRAM metal-oxide stack engineering is found to lead to minimal forming current overshoot, which results in low reset currents. In addition, RRAM metal-oxide stacks can be engineered to either require a forming step, or to have similar characteristics without applying a forming step.
ISBN:1457702258
9781457702259
ISSN:2159-483X
DOI:10.1109/IMW.2011.5873225