A high density NAND EEPROM with block-page programming for microcomputer applications

A 5 V-only 4 Mb NAND EEPROM (electrically erasable programmable read-only memory) has been successfully developed. The EEPROM has on-chip high-voltage generators, so the system needs only a 5 V power supply. The block-page erase/program mode realizes high-speed programming. On-chip test circuits pro...

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Bibliographic Details
Published in1989 Proceedings of the IEEE Custom Integrated Circuits Conference pp. 10.1/1 - 10.1/4
Main Authors Momodomi, M., Iwata, Y., Tanaka, T., Itoh, Y., Shirota, R., Masuoka, F.
Format Conference Proceeding
LanguageEnglish
Published 1989
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Summary:A 5 V-only 4 Mb NAND EEPROM (electrically erasable programmable read-only memory) has been successfully developed. The EEPROM has on-chip high-voltage generators, so the system needs only a 5 V power supply. The block-page erase/program mode realizes high-speed programming. On-chip test circuits provide high reliability. The NAND EEPROM has many applications for compact microcomputer systems, which need large storage systems with low power consumption
DOI:10.1109/CICC.1989.56726