Design and fabrication of high-k filled sub-100 nm gap resonators with embedded dielectric field effect transistor for ultra high frequency applications

A novel fabrication process for the integration of Field Effect Transistors in electrostatically actuated bulk acoustic resonators is demonstrated. ALD-deposited HfO 2 is used as a high-k dielectric for the FET and as an etch-stop layer during the release of the resonator structure as well, enabling...

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Bibliographic Details
Published in2016 IEEE Silicon Nanoelectronics Workshop (SNW) pp. 70 - 71
Main Authors Casu, Emanuele Andrea, Lopez, Mariazel Maqueda, Vitale, Wolfgang A., Fernandez-Bolanos, Montserrat, Ionescu, Adrian Mihai
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2016
Subjects
Atomic layer deposition
Cats
Fabrication
High K dielectric materials
Radio frequency
Resonant frequency
Sulfur hexafluoride
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Summary:A novel fabrication process for the integration of Field Effect Transistors in electrostatically actuated bulk acoustic resonators is demonstrated. ALD-deposited HfO 2 is used as a high-k dielectric for the FET and as an etch-stop layer during the release of the resonator structure as well, enabling the creation of sub-100 nm air-gap resonators with FET amplification enhancement.
DOI:10.1109/SNW.2016.7577989