4 Watt, 45% bandwidth Si-LDMOS high linearity power amplifier for modern wireless communications systems

In this contribution, a Si-LDMOS transistor is used to design a power amplifier (PA) in a broad frequency band covering a number of modern wireless communications systems. The design, implementation, and experimental results of 4 W wideband Si-LDMOS PA are presented. A method based on source/load--p...

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Bibliographic Details
Published in2012 2nd International Conference on Advances in Computational Tools for Engineering Applications (ACTEA) pp. 110 - 113
Main Authors Arnous, Mhd Tareq, Boeck, G.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.12.2012
Subjects
Amplifier
Broadband
Broadband amplifiers
Frequency measurement
Gain
Linearity
Microwave amplifiers
Power amplfiers
Power amplifiers
Power generation
Power measurement
Si-LDMOS
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Summary:In this contribution, a Si-LDMOS transistor is used to design a power amplifier (PA) in a broad frequency band covering a number of modern wireless communications systems. The design, implementation, and experimental results of 4 W wideband Si-LDMOS PA are presented. A method based on source/load--pull characterization has been used to extract optimum source and load impedances over the desired bandwidth. Following this, a systematic approach to design wideband matching network is suggested. In the frequency band 1.7-2.7 GHz, 3.4 - 4.0 W output power and 25 % drain efficiency were achieved. The 3 rd -order intermodulation distortion (IMD3) performance of the designed PA is evaluated by providing a two-tone signal to the amplifier. At two-tone output power of 1 W, IMD3 of around -30 dBc was measured over the design band.
ISBN:1467324884
9781467324885
DOI:10.1109/ICTEA.2012.6462846