Filament scaling forming technique and level-verify-write scheme with endurance over 107 cycles in ReRAM

• Published in: 2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers pp. 220 - 221
• Main Authors: Kawahara, A., Kawai, K., Ikeda, Y., Katoh, Y., Azuma, R., Yoshimoto, Y., Tanabe, K., Zhiqiang Wei, Ninomiya, T., Katayama, K., Yasuhara, R., Muraoka, S., Himeno, A., Yoshikawa, N., Murase, H., Shimakawa, K., Takagi, T., Mikawa, T., Aono, K.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.02.2013
• Subjects: Flash memories; Hysteresis; Pulse generation; Resistance; Timing; Transient analysis
• ISBN: 9781467345156; 1467345156
• ISSN: 0193-6530; 2376-8606
• DOI: 10.1109/ISSCC.2013.6487708

Resistive RAM (ReRAM) has been recently developed for applications that require higher speed and lower voltage than Flash memory is able to provide. One of the applications is micro-controller units (MCUs) or SoCs with several megabits of embedded ReRAM. Another is solid-state drives (SSDs) where a combination of higher-density ReRAM and NAND flash memory would achieve high-performance and high-reliability storage [1], suitable for server applications for future cloud computing. ReRAM is attractive for several reasons. First, it operates at high speed and low voltage. Second, it enables high density due to the simple structure of the resistive element (RE) [2]. Third, it is immune to external environment such as magnetic fields or radiation, since the resistive switching is based on the redox reaction [3].