Dose enhancement due to interconnects in deep-submicron MOSFETs exposed to X-rays

We present the first experimental report of dose-enhancement effects due to interconnects in deep-submicron CMOS, using ad-hoc designed MOSFETs with different metal layouts. We demonstrate that the presence of metal-1 tracks in the proximity of the device active areas may significantly modify the re...

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Bibliographic Details
Published in2008 European Conference on Radiation and Its Effects on Components and Systems pp. 432 - 437
Main Authors Griffoni, A, Silvestri, M, Gerardin, S, Meneghesso, G, Paccagnella, A, Kaczer, B, de Potter de ten Broeck, M, Verbeeck, R, Nackaerts, A
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.09.2008
Subjects
CMOS
Degradation
dose enhancement
Layout
Logic gates
Metals
MOSFETs
Radiation effects
radiation hardness
total dose
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Summary:We present the first experimental report of dose-enhancement effects due to interconnects in deep-submicron CMOS, using ad-hoc designed MOSFETs with different metal layouts. We demonstrate that the presence of metal-1 tracks in the proximity of the device active areas may significantly modify the response to X-rays. The impact of the secondary electron emission from metal-1 layers is strongly dependent on the relative position to the transistor lateral isolation and LDD spacers.
ISBN:1457704811
9781457704819
ISSN:0379-6566
DOI:10.1109/RADECS.2008.5782758