Novel ultra-low power RF lateral BJT on SOI-CMOS compatible substrate for SoC applications

This work presents an ultra-low power RF LBJT on SOI. The Johnson's product (f/sub /spl tau// /spl times/BV/sub CEO/) of the fabricated LBJTs ranges between 190-300 GHz-V. The f/sub max/ of the optimal device reaches 46 GHz at collector current density of only 0.15mA//spl mu/m/sup 2/. This LBJT...

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Bibliographic Details
Published in2005 IEEE International SOI Conference Proceedings pp. 123 - 125
Main Authors Sun, I.-S.M., Ng, W.T., Mochizuki, H., Kanekiyo, K., Kobayashi, T., Toita, M., Imai, H., Ishikawa, A., Tamura, S., Takasuka, K.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2005
Subjects
CMOS process
CMOS technology
Current density
Electric breakdown
Fabrication
Isolation technology
Mercury (metals)
Radio frequency
Substrates
Transistors
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Summary:This work presents an ultra-low power RF LBJT on SOI. The Johnson's product (f/sub /spl tau// /spl times/BV/sub CEO/) of the fabricated LBJTs ranges between 190-300 GHz-V. The f/sub max/ of the optimal device reaches 46 GHz at collector current density of only 0.15mA//spl mu/m/sup 2/. This LBJT is compatible with SOI-CMOS for SOI-BiCMOS integration, an ideal technology for RF and mixed-signal SoC.
ISBN:0780392124
9780780392120
ISSN:1078-621X
2577-2295
DOI:10.1109/SOI.2005.1563561