Novel ultra-low power RF lateral BJT on SOI-CMOS compatible substrate for SoC applications
This work presents an ultra-low power RF LBJT on SOI. The Johnson's product (f/sub /spl tau// /spl times/BV/sub CEO/) of the fabricated LBJTs ranges between 190-300 GHz-V. The f/sub max/ of the optimal device reaches 46 GHz at collector current density of only 0.15mA//spl mu/m/sup 2/. This LBJT...
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Published in | 2005 IEEE International SOI Conference Proceedings pp. 123 - 125 |
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Main Authors | , , , , , , , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
2005
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Subjects | |
Online Access | Get full text |
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Summary: | This work presents an ultra-low power RF LBJT on SOI. The Johnson's product (f/sub /spl tau// /spl times/BV/sub CEO/) of the fabricated LBJTs ranges between 190-300 GHz-V. The f/sub max/ of the optimal device reaches 46 GHz at collector current density of only 0.15mA//spl mu/m/sup 2/. This LBJT is compatible with SOI-CMOS for SOI-BiCMOS integration, an ideal technology for RF and mixed-signal SoC. |
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ISBN: | 0780392124 9780780392120 |
ISSN: | 1078-621X 2577-2295 |
DOI: | 10.1109/SOI.2005.1563561 |