III-V/Si Chip-on-Wafer Direct Transfer Bonding technology (CoW DTB); process capabilities and bonded structure characterizations

Three-Dimensional (3D) integration of group III-V compound semiconductor devices on silicon (III-V/Si) is important for next-generation microsystems such as Si photonics or ultra-high-frequency electronics. We proposed a new "Chip-on-Wafer Direct Transfer Bonding" (CoW DTB) technology for...

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Bibliographic Details
Published in2016 6th Electronic System-Integration Technology Conference (ESTC) pp. 1 - 6
Main Authors Kurita, Yoichiro, Uemura, Hiroshi, Ishibashi, Fumitaka, Furuyama, Hideto, Inamura, Miki, Kakumoto, Yasuhide, Abe, Tomoyuki
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.09.2016
Subjects
Bonding
Cows
Epitaxial layers
III-V semiconductor materials
Indium phosphide
Silicon
Substrates
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Summary:Three-Dimensional (3D) integration of group III-V compound semiconductor devices on silicon (III-V/Si) is important for next-generation microsystems such as Si photonics or ultra-high-frequency electronics. We proposed a new "Chip-on-Wafer Direct Transfer Bonding" (CoW DTB) technology for III-V/Si applications. The technology concept was demonstrated using newly developed equipment and bond evaluation of InP diced chips with AlGaInAs Multiple Quantum Well (MQW) epitaxial layers on 200 mm diameter Si wafer. This paper describes process applicability for small die, structure analysis and electrical characteristic of InP/Si oxide bond interface.
DOI:10.1109/ESTC.2016.7764692