Millimetre-wave performance of passive microstrip bandpass filters based on 40nm CMOS technology

In this paper, we report two microstrip passive bandpass filters fabricated on GLOBALFOUNDRIES' 40nm CMOS technology with centre frequencies of 60GHz and 76GHz for the first time. They employ dual ground shield metal and high density MOM capacitors that enable low loss performance coupled with...

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Bibliographic Details
Published in2016 IEEE 59th International Midwest Symposium on Circuits and Systems (MWSCAS) pp. 1 - 4
Main Authors Xi Sung Loo, Chew, Kok Wai Johnny, Cheng, Michael, Kiat Seng Yeo
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.10.2016
Subjects
Band-pass filters
CMOS
CMOS technology
filters
Frequency measurement
grounding
Insertion loss
Integrated circuit modeling
Metals
Microstrip filters
millimetre-wave
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Summary:In this paper, we report two microstrip passive bandpass filters fabricated on GLOBALFOUNDRIES' 40nm CMOS technology with centre frequencies of 60GHz and 76GHz for the first time. They employ dual ground shield metal and high density MOM capacitors that enable low loss performance coupled with compact design. The 76 GHz filter has the best ever insertion loss performance of 2.7dB at W-band while consuming least reported area of 0.0167mm2 without pads. Meanwhile, the 60GHz filter able to achieve competitive insertion loss performance of 2.5dB against filters fabricated in mature CMOS technology while consuming area of only 0.0328mm2 without pads. Both filters achieve minimum return loss of greater than 11dB for bandwidth of 24.3% and 30.7%. The measured performance are in good agreement with electromagnetic simulation.
ISSN:1558-3899
DOI:10.1109/MWSCAS.2016.7870129