Suitability of GaN and LDMOS for 70-82% efficiency 120-200W HPA addressing spaceborne P-band radar applications

This paper addresses the development of P-band (435 MHz) HPA based on different technologies (GaN HEMT, LDMOS FET) for future use in pace radar applications in the context of the Biomass project. In particular best in class PAE of 70%-82% is targeted and achieved for power levels of 120W. In order t...

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Bibliographic Details
Published in2012 42nd European Microwave Conference pp. 691 - 694
Main Authors Le Gallou, N., Vidkjaer, J., Poivey, C.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.10.2012
Subjects
Gallium nitride
Ions
Logic gates
Power amplifiers
Power generation
Radio frequency
Transistors
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Summary:This paper addresses the development of P-band (435 MHz) HPA based on different technologies (GaN HEMT, LDMOS FET) for future use in pace radar applications in the context of the Biomass project. In particular best in class PAE of 70%-82% is targeted and achieved for power levels of 120W. In order to address suitability for space applications, the results of radiation tests are presented. The results constraint the design mainly for LDMOS technology and allow to draw conclusions on the most appropriate technology for use in future spaceborne application at P-band.
ISBN:1467322156
9781467322157
DOI:10.23919/EuMC.2012.6459075