Characteristic optimization of MWCNTs using MPCVD system

• Published in: 2007 IEEE International Conference on Systems, Man and Cybernetics pp. 3011 - 3015
• Main Authors: Chun-Hsi Su, Chii-Ruey Lin, Chun-Yeon Lin, June-Yen Jhuang, Chih-Ming Hsu
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.10.2007
• Subjects: Carbon nanotubes; Charge-coupled image sensors; Manufacturing; Plasma chemistry; Plasma devices; Plasma materials processing; Plasma properties; Plasma temperature; Temperature sensors; Tuners
• ISBN: 142440990X; 9781424409907
• ISSN: 1062-922X; 2577-1655
• DOI: 10.1109/ICSMC.2007.4413680

Microwave Plasma Chemical Vapor Deposition (MPCVD) method can be used to grow various kinds of diamond films and carbon nanotubes at various temperatures. However, it is usually only the hand-on experience that can be relied on to obtain the nearly satisfactory plasma in the MPCVD system. Therefore, this study set up the reflected power sensor as a reference parameter and used a CCD (Charge Coupled Device) to observe the plasma image. Manufacturing parameters, such as gas flow rate, input microwave power, working distance, deposition time, chamber pressure and substrate temperature, were all fixed to grow MWCNTs. The controlled adjustments, as the independent variables, are the positions of E-H tuner along x-axis and y-axis which directly affect the conditions of the plasma. In order to grow multiwalled carbon nanotubes (MWCNTs) of better quality with a self-assembled MPCVD system, the quality indexes of MWCNTs, which are the aspect ratio of MWCNTs and the I D /I G intensity ratio of the Raman spectrum of MWCNTs, were analyzed. With the established database, it is found that there exist the optimized positions of E-H tuner along x-axis and y-axis for growing MWCNTs of high quality. Moreover, we used PCA (Principle Component Analysis) method to analysis these data, and a relationship between manufacturing parameters was found.