Reactive ion etching of AlxGa1−xN/GaN heterostructure using Cl2, BCl3/Ar gas plasma

The etching processes were carried out in Oxford Instruments Plasmalab80Plus system. Present work is concentrating on discussion of a scope of different Al x Ga 1-x N/GaN heterostructures in relation to percentage composition of aluminum. The topography of heterostructure surface and slope was contr...

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Bibliographic Details
Published inThe Eighth International Conference on Advanced Semiconductor Devices and Microsystems pp. 49 - 52
Main Authors Oleszkiewicz, W., Gryglewicz, J., Paszkiewicz, B., Paszkiewicz, R., Szyszka, A., Ramiaczek-Krasowska, M., Stafiniak, A., Tlaczala, M.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.10.2010
Subjects
Etching
Gallium nitride
Logic gates
Materials
Surface roughness
Surface topography
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Summary:The etching processes were carried out in Oxford Instruments Plasmalab80Plus system. Present work is concentrating on discussion of a scope of different Al x Ga 1-x N/GaN heterostructures in relation to percentage composition of aluminum. The topography of heterostructure surface and slope was controlled using AFM technique.
ISBN:9781424485741
1424485746
DOI:10.1109/ASDAM.2010.5666352