Broadband antireflective structures for the THz spectral range fabricated on high resistive float zone silicon

Antireflective structures for a spectral range from 0.1-1.2 THz are applied to the surface of high resistive float zone silicon by deep reactive ion etching. Binary hexagonal and rectangular structures yield an increase in the pulse maximum of the electric field strength of about 20 percent for one...

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Bibliographic Details
Published in2008 33rd International Conference on Infrared, Millimeter and Terahertz Waves pp. 1 - 2
Main Authors Bruckner, C., Kasebier, T., Pradarutti, B., Riehemann, S., Notni, G., Kley, E.-B., Tunnermann, A.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.09.2008
Subjects
Diffraction
Electric fields
Etching
Gratings
Periodic structures
Refractive index
Silicon
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Summary:Antireflective structures for a spectral range from 0.1-1.2 THz are applied to the surface of high resistive float zone silicon by deep reactive ion etching. Binary hexagonal and rectangular structures yield an increase in the pulse maximum of the electric field strength of about 20 percent for one structured surface.
ISBN:1424421195
9781424421190
ISSN:2162-2027
DOI:10.1109/ICIMW.2008.4665564