The Effects of ONO thickness on Memory Characteristics in Nano-scale Charge Trapping Devices

In the use of single/few electrons in distributed storage for nonvolatile, low power and fast memories, providing statistical reproducibility at the nanoscale is a key challenge since relative variance has a radic n dependence and we are working with limited number of storage sites. We have used def...

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Bibliographic Details
Published in2007 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) pp. 1 - 2
Main Authors Moon Kyung Kim, Soo Doo Chae, Chung Woo Kim, Jooyeon Kim, Tiwari, S.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.04.2007
Subjects
Degradation
Electron traps
Energy states
Leakage current
Nanoscale devices
Reproducibility of results
Silicon
SONOS devices
Threshold voltage
Tunneling
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Summary:In the use of single/few electrons in distributed storage for nonvolatile, low power and fast memories, providing statistical reproducibility at the nanoscale is a key challenge since relative variance has a radic n dependence and we are working with limited number of storage sites. We have used defects at interfaces of dielectrics to evaluate this reproducibility and evaluate the performance of memories. These experiments show that nearly 100 electrons can be stored at 30 nm dimensions, sufficient for reproducibility, and that a minimum of tunneling oxide thickness is required to assure reliable retention characteristics. Different tunneling oxide thicknesses and the effect of low doped drain (LDD) process is investigated to draw these conclusions.
ISBN:142440584X
9781424405848
ISSN:1524-766X
2690-8174
DOI:10.1109/VTSA.2007.378897