Mist chemical vapor deposited-Al2O3/AlGaN interfacial characterization for GaN MIS-HEMTs

Amorphous Al2O3 gate insulator on AlGaN/GaN structure have been deposited by cost-effective mist chemical vapor deposition (mist-CVD) technique. The properties of deposited mist-Al 2 O 3 gate insulators are comparable to those reported for high-quality amorphous Al 2 O 3 films deposited by atomic la...

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Bibliographic Details
Published in2021 IEEE International Meeting for Future Electron Devices, Kansai (IMFEDK) pp. 1 - 2
Main Authors Motoyama, Tomohiro, Yatabe, Zenji, Nakamura, Yusui, Baratov, Ali, Shan Low, Rui, Urano, Shun, Asubar, Joel T., Kuzuhara, Masaaki
Format Conference Proceeding
LanguageEnglish
Published IEEE 17.11.2021
Subjects
Al 2 O 3
Component
Gate leakage
HEMT
HEMTs
Insulators
Interface state density
Logic gates
Mist-CVD
Photonic band gap
Wide band gap semiconductors
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Summary:Amorphous Al2O3 gate insulator on AlGaN/GaN structure have been deposited by cost-effective mist chemical vapor deposition (mist-CVD) technique. The properties of deposited mist-Al 2 O 3 gate insulators are comparable to those reported for high-quality amorphous Al 2 O 3 films deposited by atomic layer deposition (ALD) method. In addition, we have fabricated AlGaN/GaN metal-insulator-semiconductor (MIS) diodes using Al 2 O 3 gate insulator deposited by mist-CVD. We obtained practically hysteresis-free with spill-over behavior in capacitance-voltage (C-V) characteristics from the fabricated mist-Al2O3 MIS diodes suggesting high interfacial quality of the mist-Al 2 O 3 /AlGaN interface.
DOI:10.1109/IMFEDK53601.2021.9637625