Negative differential resistance effect in ITO/TiO2/ITO based RRAM sandwich structures

ITO/TiO 2 /ITO based RRAM sandwich structures exhibited both large current-voltage hysteresis loop and voltage controlled negative differential resistance effects at room temperature. Resistance switching process was well interpreted and simulated using ion migration related filament model. We belie...

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Bibliographic Details
Published in2014 IEEE International Conference on Electron Devices and Solid-State Circuits pp. 1 - 2
Main Authors Peijian Zhang, Guangbing Chen, Yong Liu, Gangyi Hu, Zhaohuan Tang, Guohua Shui, Wensuo Chen, Yang Meng, Xinyu Pan, Hongwu Zhao
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2014
Subjects
differential resistance
Heating
Indium tin oxide
ion migration
Joule heating
Metals
resistance switching
Switches
Voltage control
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Summary:ITO/TiO 2 /ITO based RRAM sandwich structures exhibited both large current-voltage hysteresis loop and voltage controlled negative differential resistance effects at room temperature. Resistance switching process was well interpreted and simulated using ion migration related filament model. We believed that the differential resistance effect originated from the combination results from the Joule heating and phase change or atomic rearrangement.
DOI:10.1109/EDSSC.2014.7061219