Analog/radiofrequency and linearity performance of staggered heterojunction nanowire(nw) tunnel FET for low power application

• Published in: 2017 Devices for Integrated Circuit (DevIC) pp. 441 - 445
• Main Authors: Biswal, Sudhansu Mohan, Baral, Biswajit, De, Debashis
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.03.2017
• Subjects: 1-dB compression point; Cut-off Frequency; Heterojunctions; III-V HET Jn Tunnel FET; Intrinsic gain; Linearity; Logic gates; Performance evaluation; Silicon; TCAD; TFETs; Transconductance generation factor(TGF)
• DOI: 10.1109/DEVIC.2017.8073988

In this paper, the analog/radio frequency and linearity performance of staggered heterojunction nanowire tunnel FET is studied and compared with Si and InAs based NW TFET of same dimension. Different analog/RadioFrequency and linearity parameters like transconductance (gm), intrinsic gain (gmR0), cut-off frequency (fT), as well as 1-dB compression point has been studied. There is a better enhancement in the analog/RF performance obtained from heterojunction NW TFET over Si and InAs TFET. To improve ION and subthreshold swing, a considerable advance in the analog/RadioFrequency performance parameters obtain by the HETJ Nanowire TFET in comparision to Si and InAs Nanowire tunnel FET for use in analog/mixed signal low power applications is reported. The result reveals that heterojunction TFET provides superior intrinsic gain, higher cutoff frequency, better linearity performance as compared to Si and InAs TFET.