Analog/radiofrequency and linearity performance of staggered heterojunction nanowire(nw) tunnel FET for low power application

In this paper, the analog/radio frequency and linearity performance of staggered heterojunction nanowire tunnel FET is studied and compared with Si and InAs based NW TFET of same dimension. Different analog/RadioFrequency and linearity parameters like transconductance (gm), intrinsic gain (gmR0), cu...

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Bibliographic Details
Published in2017 Devices for Integrated Circuit (DevIC) pp. 441 - 445
Main Authors Biswal, Sudhansu Mohan, Baral, Biswajit, De, Debashis
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.03.2017
Subjects
1-dB compression point
Cut-off Frequency
Heterojunctions
III-V HET Jn Tunnel FET
Intrinsic gain
Linearity
Logic gates
Performance evaluation
Silicon
TCAD
TFETs
Transconductance generation factor(TGF)
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Summary:In this paper, the analog/radio frequency and linearity performance of staggered heterojunction nanowire tunnel FET is studied and compared with Si and InAs based NW TFET of same dimension. Different analog/RadioFrequency and linearity parameters like transconductance (gm), intrinsic gain (gmR0), cut-off frequency (fT), as well as 1-dB compression point has been studied. There is a better enhancement in the analog/RF performance obtained from heterojunction NW TFET over Si and InAs TFET. To improve ION and subthreshold swing, a considerable advance in the analog/RadioFrequency performance parameters obtain by the HETJ Nanowire TFET in comparision to Si and InAs Nanowire tunnel FET for use in analog/mixed signal low power applications is reported. The result reveals that heterojunction TFET provides superior intrinsic gain, higher cutoff frequency, better linearity performance as compared to Si and InAs TFET.
DOI:10.1109/DEVIC.2017.8073988