Feasibility of SIO2/Al2O3 tunnel dielectric for future Flash memories generations

In this paper, we investigate the feasibility of SiO 2 /Al 2 O 3 stack tunnel dielectric for future Flash memory generations using statistical leakage current simulations. We show that the statistical Monte Carlo (MC) simulator we employed reproduces accurately leakage currents measured on SiO 2 /Al...

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Bibliographic Details
Published in2008 9th European Workshop on Ultimate Integration on Silicon pp. 111 - 114
Main Authors Padovani, A., Larcher, L., Verma, S., Pavan, P., Majhi, P., Kapur, P., Parat, K., Bersuker, G., Saraswat, K.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.03.2008
Subjects
Decision support systems
dielectrics
Flash memories
high-κ
leakage current modeling
modeling
Quadratic programming
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ISBN1424417295
9781424417292
DOI10.1109/ULIS.2008.4527152

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Summary:In this paper, we investigate the feasibility of SiO 2 /Al 2 O 3 stack tunnel dielectric for future Flash memory generations using statistical leakage current simulations. We show that the statistical Monte Carlo (MC) simulator we employed reproduces accurately leakage currents measured on SiO 2 /Al 2 O 3 dielectric capacitors. Exploiting its statistical capabilities, we calculate leakage current distributions in Flash memory retention conditions. We show that the high defectiveness of AI 2 O 3 stacks strongly reduces the potential improvement of Flash retention due to the introduction of AI 2 O 3 tunnel dielectric.
ISBN:1424417295
9781424417292
DOI:10.1109/ULIS.2008.4527152