A New and Better Method for Extracting the Parasitic Elements of On-Wafer GaN Transistors
By biasing the AlGaN/GaN HEMTs with low DC gate forward current and floating drain, a new method for extracting parasitic resistances and parasitic inductances is introduced. The originality of the proposed method lies in the low DC gate forward current used for extracting R g and L g . While the cl...
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Published in | 2007 IEEE/MTT-S International Microwave Symposium pp. 791 - 794 |
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Main Authors | , , , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
01.06.2007
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Subjects | |
Online Access | Get full text |
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Summary: | By biasing the AlGaN/GaN HEMTs with low DC gate forward current and floating drain, a new method for extracting parasitic resistances and parasitic inductances is introduced. The originality of the proposed method lies in the low DC gate forward current used for extracting R g and L g . While the classical method for extracting R g and L g uses a set of S-parameters measured under different large DC gate forward current, the proposed method uses a data set of S-parameters measured at a single low DC gate forward current. The excellent agreement between model and experimental data verify the validity of the proposed method. |
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ISBN: | 1424406870 9781424406876 |
ISSN: | 0149-645X 2576-7216 |
DOI: | 10.1109/MWSYM.2007.380077 |