A New and Better Method for Extracting the Parasitic Elements of On-Wafer GaN Transistors

By biasing the AlGaN/GaN HEMTs with low DC gate forward current and floating drain, a new method for extracting parasitic resistances and parasitic inductances is introduced. The originality of the proposed method lies in the low DC gate forward current used for extracting R g and L g . While the cl...

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Bibliographic Details
Published in2007 IEEE/MTT-S International Microwave Symposium pp. 791 - 794
Main Authors Zarate-de Landa, A., Zuniga-Juarez, J.E., Reynoso-Hernandez, J.A., Maya-Sanchez, M.C., Piner, E.L., Linthicum, K.J.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2007
Subjects
AlGaN/GaN HEMTs
Aluminum gallium nitride
Current measurement
Data mining
Electrical resistance measurement
Equivalent circuits
Gallium nitride
HEMTs
MODFETs
Parasitic capacitance
parasitic elements
Roentgenium
small-signal equivalent circuit
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Summary:By biasing the AlGaN/GaN HEMTs with low DC gate forward current and floating drain, a new method for extracting parasitic resistances and parasitic inductances is introduced. The originality of the proposed method lies in the low DC gate forward current used for extracting R g and L g . While the classical method for extracting R g and L g uses a set of S-parameters measured under different large DC gate forward current, the proposed method uses a data set of S-parameters measured at a single low DC gate forward current. The excellent agreement between model and experimental data verify the validity of the proposed method.
ISBN:1424406870
9781424406876
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2007.380077