Reliability of bottom gate amorphous InGaZnO thin-film transistors with siloxane passivation layer

We investigate the influence of polymer passivation on amorphous Indium Gallium Zinc Oxide (a-IGZO) TFT reliability. We made photosensitive siloxane passivation layer on bottom-gate type a-IGZO TFTs with SiO 2 /Si substrate. For photosensitive materials, contact holes can be formed by UV photolithog...

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Bibliographic Details
Published in2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) pp. 1 - 2
Main Authors Kulchaisit, Chaiyanan, Fujii, Mami, Ueoka, Yoshihiro, Bermundo, Juan Paolo, Horita, Masahiro, Ishikawa, Yasuaki, Uraoka, Yukiharu
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2014
Subjects
a-InGaZnO
Logic gates
Materials
Passivation
passivation layer
photosensitive siloxane
Reliability
Stress
Thin film transistors
Threshold voltage
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Summary:We investigate the influence of polymer passivation on amorphous Indium Gallium Zinc Oxide (a-IGZO) TFT reliability. We made photosensitive siloxane passivation layer on bottom-gate type a-IGZO TFTs with SiO 2 /Si substrate. For photosensitive materials, contact holes can be formed by UV photolithography technique without plasma etching process, leading to serious damage to the channel layer. The samples with and without passivation layer were tested in terms of the stability during the positive bias stress (PBS; V gs = 20 V) for 1000 sec. The stability of a-IGZO TFTs was improved by using the photo-sensitive siloxane passivation layer.
ISBN:1479936146
9781479936144
DOI:10.1109/IMFEDK.2014.6867088