Advanced i-PVD barrier metal deposition technology for 90 nm Cu interconnects

• Published in: Proceedings of the IEEE 2003 International Interconnect Technology Conference (Cat. No.03TH8695) pp. 165 - 167
• Main Authors: Park, K.-C., Kim, I.-R., Suh, B.-S., Choi, S.-M., Song, W.-S., Wee, Y.-J., Lee, S.-G., Chung, J.-S., Chung, J.-H., Hah, S.-R., Ahn, J.-H., Lee, K.-T., Kang, H.-K., Suh, K.-P.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 2003
• Subjects: Annealing; Chemical vapor deposition; Contact resistance; Dielectrics; Electrical resistance measurement; Glass; Large scale integration; Testing; Thermal resistance; Thermal stability
• ISBN: 9780780377974; 0780377974
• DOI: 10.1109/IITC.2003.1219743

An advanced i-PVD(ionized physical vapor deposition) barrier metal deposition technology has been developed for 90 nm Cu interconnects. The feature of this technology is to re-sputter the thick barrier metal at the contact/trench bottom, which was deposited by i-PVD, and attach the re-sputtered barrier metal to the sidewall. By using this technology, it is possible to obtain relatively thin bottom and thick sidewall coverage and thus a more conformal deposition. This technology is shown to be very effective in both lowering via resistance and improving reliabilities of 90 nm Cu interconnects embedded in SiOC-type low-k(k=2.9) inter-metal dielectric.