Non-volatile Spin-Transfer Torque RAM (STT-RAM): An analysis of chip data, thermal stability and scalability

• Published in: 2010 IEEE International Memory Workshop pp. 1 - 3
• Main Authors: Driskill-Smith, A, Watts, S, Apalkov, D, Druist, D, Tang, X, Diao, Z, Luo, X, Ong, A, Nikitin, V, Chen, E
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.05.2010
• Subjects: Data analysis; Magnetic analysis; Pulse measurements; Scalability; Semiconductor device measurement; Space vector pulse width modulation; Stability analysis; Thermal stability; Time measurement; Torque

In this paper, we present a detailed analysis of our latest statistical MTJ switching data and STT-RAM chip results. We analyze STT-RAM thermal stability and, for the first time, compare the thermal stability parameter obtained from pulse-width dependence measurements with that obtained from read di...