Non-volatile Spin-Transfer Torque RAM (STT-RAM): An analysis of chip data, thermal stability and scalability

In this paper, we present a detailed analysis of our latest statistical MTJ switching data and STT-RAM chip results. We analyze STT-RAM thermal stability and, for the first time, compare the thermal stability parameter obtained from pulse-width dependence measurements with that obtained from read di...

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Bibliographic Details
Published in2010 IEEE International Memory Workshop pp. 1 - 3
Main Authors Driskill-Smith, A, Watts, S, Apalkov, D, Druist, D, Tang, X, Diao, Z, Luo, X, Ong, A, Nikitin, V, Chen, E
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2010
Subjects
Data analysis
Magnetic analysis
Pulse measurements
Scalability
Semiconductor device measurement
Space vector pulse width modulation
Stability analysis
Thermal stability
Time measurement
Torque
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Summary:In this paper, we present a detailed analysis of our latest statistical MTJ switching data and STT-RAM chip results. We analyze STT-RAM thermal stability and, for the first time, compare the thermal stability parameter obtained from pulse-width dependence measurements with that obtained from read disturb measurements. We also analyze the scalability of STT-RAM, and compare the properties of STT-RAM with both in-plane and perpendicular orientations of the MTJ magnetization.
ISBN:9781424467198
1424467195
ISSN:2159-483X
DOI:10.1109/IMW.2010.5488325