Apparent doping-dependence of the a-Si:H/c-Si interface degradation upon ITO sputtering

In this work, we address the doping dependence of SHJ solar cell precursor passivation degradation upon ITO sputtering by PVD. We report the higher apparent sensitivity of the emitter. By varying the doping, we were able to demonstrate that the emitter is not necessarily less resilient to this proce...

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Bibliographic Details
Published in2014 IEEE 40th Photovoltaic Specialist Conference (PVSC) pp. 0645 - 0648
Main Authors Sobkowicz, Igor P., Salomon, Antoine, Roca i Cabarrocas, Pere
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2014
Subjects
amorphous silicon
crystalline silicon
Degradation
Doping
heterojunction
Indium tin oxide
ITO
Passivation
Photovoltaic cells
Silicon
Sputtering
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Summary:In this work, we address the doping dependence of SHJ solar cell precursor passivation degradation upon ITO sputtering by PVD. We report the higher apparent sensitivity of the emitter. By varying the doping, we were able to demonstrate that the emitter is not necessarily less resilient to this process. Indeed the same amount of defects can be created on the BSF side all the while remaining screened thanks to the highly effective field-effect provided by the capping n-doped a-Si:H layer.
ISSN:0160-8371
DOI:10.1109/PVSC.2014.6925005