Influence of annealing temperature on the performance of graphene / SiC transistors with high-k / metal gate

In this study, we investigate the impact of thermal annealing on the electrical characteristics of epitaxial graphene field effect transistors. Top gated devices were fabricated from graphene obtained on silicon carbide (SiC) substrate. Thanks to an annealing at 300°C, the performance of the devices...

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Bibliographic Details
Published inUlis 2011 Ultimate Integration on Silicon pp. 1 - 4
Main Authors Clavel, M, Poiroux, T, Mouis, M, Becerra, L, Thomassin, J L, Zenasni, A, Lapertot, G, Rouchon, D, Lafond, D, Faynot, O
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.03.2011
Subjects
Annealing
Current measurement
Epitaxial growth
Logic gates
Performance evaluation
Silicon carbide
Substrates
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Summary:In this study, we investigate the impact of thermal annealing on the electrical characteristics of epitaxial graphene field effect transistors. Top gated devices were fabricated from graphene obtained on silicon carbide (SiC) substrate. Thanks to an annealing at 300°C, the performance of the devices was enhanced by a factor of 90. The maximal transconductance reached really high values such as 5900μS/μm at V D =3V, corresponding to a carrier mobility of 2230 cm 2 /V.s.
ISBN:9781457700903
1457700905
DOI:10.1109/ULIS.2011.5757955