High-resolution and site-specific SSRM on S/D engineering
Recently, we reported significantly improved spatial resolution in scanning spreading resistance microscopy (SSRM) by measuring in a vacuum. In this work, we demonstrate the 1-nm-spatial resolution of SSRM on pn junction delineation by comparing with three-dimensional device simulation. A five-order...
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Published in | 2010 International Workshop on Junction Technology Extended Abstracts pp. 1 - 5 |
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Main Authors | , , , , , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
01.05.2010
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Subjects | |
Online Access | Get full text |
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Summary: | Recently, we reported significantly improved spatial resolution in scanning spreading resistance microscopy (SSRM) by measuring in a vacuum. In this work, we demonstrate the 1-nm-spatial resolution of SSRM on pn junction delineation by comparing with three-dimensional device simulation. A five-order dynamic range of carrier concentration is also confirmed on staircase sample. A systematic comparison between pFETs/nFETs on (110) and (100) substrates has been carried out with SSRM. The S/D of (110) pFETs shows less lateral distribution than that of (100), strongly indicating 2D-channeling effect of boron ion implantation. We also succeeded in a new sample-making method by fully FIB pick up, enabling site-specific SSRM characteristics for failure analysis and for further scaled devices. |
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ISBN: | 1424458668 9781424458660 |
DOI: | 10.1109/IWJT.2010.5474914 |