High-resolution and site-specific SSRM on S/D engineering

Recently, we reported significantly improved spatial resolution in scanning spreading resistance microscopy (SSRM) by measuring in a vacuum. In this work, we demonstrate the 1-nm-spatial resolution of SSRM on pn junction delineation by comparing with three-dimensional device simulation. A five-order...

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Bibliographic Details
Published in2010 International Workshop on Junction Technology Extended Abstracts pp. 1 - 5
Main Authors Zhang, L, Saitoh, M, Koike, M, Takeno, S, Tanimoto, H, Adachi, K, Yasutake, N, Kusunoki, N
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2010
Subjects
Calibration
Dynamic range
Electrical resistance measurement
Laboratories
Large scale integration
Microscopy
Probes
Research and development
Spatial resolution
Substrates
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Summary:Recently, we reported significantly improved spatial resolution in scanning spreading resistance microscopy (SSRM) by measuring in a vacuum. In this work, we demonstrate the 1-nm-spatial resolution of SSRM on pn junction delineation by comparing with three-dimensional device simulation. A five-order dynamic range of carrier concentration is also confirmed on staircase sample. A systematic comparison between pFETs/nFETs on (110) and (100) substrates has been carried out with SSRM. The S/D of (110) pFETs shows less lateral distribution than that of (100), strongly indicating 2D-channeling effect of boron ion implantation. We also succeeded in a new sample-making method by fully FIB pick up, enabling site-specific SSRM characteristics for failure analysis and for further scaled devices.
ISBN:1424458668
9781424458660
DOI:10.1109/IWJT.2010.5474914