Cascade tunnel diode incorporating InAs/GaSb broken gap interface for multi-junction solar cells

We investigate the interface of InAs/GaSb as a device structure to enhance tunneling between subcells in multi-junction solar cells. Simulation is performed to study the conduction and valence band profile at the interfaces and determine the size of the tunneling barriers for charge carriers. An InA...

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Published in2011 37th IEEE Photovoltaic Specialists Conference pp. 000252 - 000255
Main Authors Lim, S. H., Allen, C. R., Ding Ding, Xinyu Liu, Furdyna, J. K., Vasileska, D., Yong-Hang Zhang
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2011
Subjects
Charge carrier processes
Junctions
Materials
Photovoltaic cells
Resistance
Semiconductor diodes
Tunneling
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Abstract We investigate the interface of InAs/GaSb as a device structure to enhance tunneling between subcells in multi-junction solar cells. Simulation is performed to study the conduction and valence band profile at the interfaces and determine the size of the tunneling barriers for charge carriers. An InAs/GaSb tunnel diode is also grown and fabricated. The conduction properties of this tunnel diode show good ohmic behavior and low contact resistance.
AbstractList We investigate the interface of InAs/GaSb as a device structure to enhance tunneling between subcells in multi-junction solar cells. Simulation is performed to study the conduction and valence band profile at the interfaces and determine the size of the tunneling barriers for charge carriers. An InAs/GaSb tunnel diode is also grown and fabricated. The conduction properties of this tunnel diode show good ohmic behavior and low contact resistance.
Author Lim, S. H.
Allen, C. R.
Xinyu Liu
Yong-Hang Zhang
Ding Ding
Furdyna, J. K.
Vasileska, D.
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  givenname: C. R.
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  surname: Ding Ding
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  organization: Center for Photonics Innovation & Sch. of Electr., Arizona State Univ., Tempe, AZ, USA
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  surname: Xinyu Liu
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  organization: Center for Photonics Innovation & Sch. of Electr., Arizona State Univ., Tempe, AZ, USA
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  surname: Yong-Hang Zhang
  fullname: Yong-Hang Zhang
  organization: Center for Photonics Innovation & Sch. of Electr., Arizona State Univ., Tempe, AZ, USA
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Snippet We investigate the interface of InAs/GaSb as a device structure to enhance tunneling between subcells in multi-junction solar cells. Simulation is performed to...
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StartPage 000252
SubjectTerms Charge carrier processes
Junctions
Materials
Photovoltaic cells
Resistance
Semiconductor diodes
Tunneling
Title Cascade tunnel diode incorporating InAs/GaSb broken gap interface for multi-junction solar cells
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