Cascade tunnel diode incorporating InAs/GaSb broken gap interface for multi-junction solar cells

We investigate the interface of InAs/GaSb as a device structure to enhance tunneling between subcells in multi-junction solar cells. Simulation is performed to study the conduction and valence band profile at the interfaces and determine the size of the tunneling barriers for charge carriers. An InA...

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Bibliographic Details
Published in2011 37th IEEE Photovoltaic Specialists Conference pp. 000252 - 000255
Main Authors Lim, S. H., Allen, C. R., Ding Ding, Xinyu Liu, Furdyna, J. K., Vasileska, D., Yong-Hang Zhang
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2011
Subjects
Charge carrier processes
Junctions
Materials
Photovoltaic cells
Resistance
Semiconductor diodes
Tunneling
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Summary:We investigate the interface of InAs/GaSb as a device structure to enhance tunneling between subcells in multi-junction solar cells. Simulation is performed to study the conduction and valence band profile at the interfaces and determine the size of the tunneling barriers for charge carriers. An InAs/GaSb tunnel diode is also grown and fabricated. The conduction properties of this tunnel diode show good ohmic behavior and low contact resistance.
ISBN:9781424499663
1424499666
ISSN:0160-8371
DOI:10.1109/PVSC.2011.6185893