Enhancement-mode GaN MIS-HEMTs for power supplies

In this paper, we present the current status of GaN-high electron mobility transistor (HEMT) for power-supply-applications. Advantages of GaN HEMT are summarized with discussing required characteristics applying for power supplies. Then, we introduce our Enhancement-mode (E-mode) GaN MIS-HEMT techno...

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Bibliographic Details
Published inThe 2010 International Power Electronics Conference - ECCE ASIA pp. 1027 - 1033
Main Authors Imada, T, Kanamura, M, Kikkawa, T
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2010
Subjects
ALD
Aluminum gallium nitride
Controllability
Current density
Electrons
Enhancement-mode
Epitaxial growth
Gallium nitride
GaN
HEMTs
MIS-HEMT
Power supplies
Silicon carbide
Surface resistance
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Summary:In this paper, we present the current status of GaN-high electron mobility transistor (HEMT) for power-supply-applications. Advantages of GaN HEMT are summarized with discussing required characteristics applying for power supplies. Then, we introduce our Enhancement-mode (E-mode) GaN MIS-HEMT technology. We focused on realizing both normally-off operation and high current density with high breakdown voltage. Detailed results are discussed in this paper. In particular, we developed a unique device structure called triple layer cap structure. High current density with normally-off mode was successfully achieved, which is preferable for power-supply application. We also demonstrated high speed performance with low on-resistance.
ISBN:9781424453948
1424453941
DOI:10.1109/IPEC.2010.5542039