C-Band GaAs MMIC Rectifier for Wireless Power Transmission

In this paper, a 5.8 GHz monolithic microwave integrated circuit (MMIC) rectifier using 0.25 \mu\mathrm{m} GaAs Power pHEMT process is proposed. Lumped elements are used for the matching circuit and low pass filter design. The simulated results show that the proposed rectifier chip has a maximum RF-...

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Bibliographic Details
Published in2018 IEEE Asia-Pacific Conference on Antennas and Propagation (APCAP) pp. 306 - 307
Main Authors Cheng, Fei, Ren, Hai-Wei, Jiang, Wei-Xuan, Zhang, Miao-Miao, Zhang, Bing, Huang, Kama
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.08.2018
Subjects
GaAs
Gallium arsenide
Gallium nitride
Microwave circuits
rectifier
Rectifiers
schottky barrier diode
Schottky diodes
Wireless power transmission
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Summary:In this paper, a 5.8 GHz monolithic microwave integrated circuit (MMIC) rectifier using 0.25 \mu\mathrm{m} GaAs Power pHEMT process is proposed. Lumped elements are used for the matching circuit and low pass filter design. The simulated results show that the proposed rectifier chip has a maximum RF-DC conversion efficiency of 67.. when the input power is 30 dBm. With a compact size of 1700 um \times900 um, the rectifier can be easily integrated with the antenna for wireless power transmission application.
DOI:10.1109/APCAP.2018.8538261