C-Band GaAs MMIC Rectifier for Wireless Power Transmission
In this paper, a 5.8 GHz monolithic microwave integrated circuit (MMIC) rectifier using 0.25 \mu\mathrm{m} GaAs Power pHEMT process is proposed. Lumped elements are used for the matching circuit and low pass filter design. The simulated results show that the proposed rectifier chip has a maximum RF-...
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Published in | 2018 IEEE Asia-Pacific Conference on Antennas and Propagation (APCAP) pp. 306 - 307 |
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Main Authors | , , , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
01.08.2018
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Subjects | |
Online Access | Get full text |
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Summary: | In this paper, a 5.8 GHz monolithic microwave integrated circuit (MMIC) rectifier using 0.25 \mu\mathrm{m} GaAs Power pHEMT process is proposed. Lumped elements are used for the matching circuit and low pass filter design. The simulated results show that the proposed rectifier chip has a maximum RF-DC conversion efficiency of 67.. when the input power is 30 dBm. With a compact size of 1700 um \times900 um, the rectifier can be easily integrated with the antenna for wireless power transmission application. |
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DOI: | 10.1109/APCAP.2018.8538261 |