A 0.0487mm2 4Kx8 Metal-Gate Innovative Fuse Memory at 22nm FD-SOI with 1.2V+/-16% Program Voltage, 0.42V Vddmin, and Full Testability

A 4Kx8 metal-gate Innovative Fuse (I-fuse) macro at 22nm FD-SOI is based on programming below thermal run away and above electromigration (EM) thresholds. The fuse macro has a 0.744um2 cell and a 0.0487mm2 macro size. This OTP can be programmed within 1.00-1.45V and read at 0.42V minimum voltage at...

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Bibliographic Details
Published in2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) pp. 1 - 2
Main Authors Chung, Shine, Lin, Jay, Fang, Wen-Kuan, Yu, Wen-Hua, Wendt, Michael, Prengel, Helmut, Xu, Anmin, Lee, Heng Kah
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.10.2018
Subjects
Computer architecture
Data security
Electromigration
Fuses
Microprocessors
Programming
Sensitivity
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Summary:A 4Kx8 metal-gate Innovative Fuse (I-fuse) macro at 22nm FD-SOI is based on programming below thermal run away and above electromigration (EM) thresholds. The fuse macro has a 0.744um2 cell and a 0.0487mm2 macro size. This OTP can be programmed within 1.00-1.45V and read at 0.42V minimum voltage at 1Mhz, with + /-100 ohm read sensitivity. This OTP macro offers full testability in (a) I-fuse cell programmability by screening initial fuse resistance, ( \mathrm {b}) \sim 100% program yield by characterizing program window, and (c) peripheral circuits by creating fake reading 1 to generate SRAM-like test patterns, respectively.
DOI:10.1109/S3S.2018.8640189