Low Specific On-Resistance AlGaN/GaN HEMT on Sapphire Substrate

On-resistance of AlGaN/GaN HEMTs with MIS and MES gate structures has been investigated. In the case of the MES gate structure, the HEMT with specific on-resistance lower than 0.1 mOmegacm 2 was obtained by shortening the drain-source length to 2.2 mum. The maximum transconductance g m,max and the o...

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Published in2006 IEEE International Symposium on Power Semiconductor Devices and IC's pp. 1 - 4
Main Authors Inada, M., Yagi, S., Yamamoto, Y., Piao, G., Shimizu, M., Okumura, H., Arai, K.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2006
Subjects
Aluminum gallium nitride
Contact resistance
Electric breakdown
Electrodes
Electrons
Gallium nitride
HEMTs
Metal-insulator structures
Ohmic contacts
Substrates
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Summary:On-resistance of AlGaN/GaN HEMTs with MIS and MES gate structures has been investigated. In the case of the MES gate structure, the HEMT with specific on-resistance lower than 0.1 mOmegacm 2 was obtained by shortening the drain-source length to 2.2 mum. The maximum transconductance g m,max and the off-state breakdown voltage were 220 mS/mm and 35 V, respectively. Tradeoff characteristic of the specific on-resistance and the breakdown voltage of the AlGaN/GaN MES-gate HEMT exceeded theoretical limit of Si-based devices. In the case of the MIS-gate HEMTs, by shortening the source-drain length to 1.8 mum, the specific on-resistance lower than 0.17 mOmegacm 2 and the maximum drain current of 920 mA/mm were obtained
ISBN:9780780397149
0780397142
ISSN:1063-6854
1946-0201
DOI:10.1109/ISPSD.2006.1666085