100 GHz push-push oscillator in 90 nm CMOS technology
A 100 GHz fixed-tuned oscillator was designed and fabricated using a 90 nm bulk CMOS process. Push-push mode was chosen to improve the power output. The oscillator exhibits -3 dBm output power at 101 GHz with 27 mW power consumption. The measured SSB phase noise is -85 dBc/Hz at 1 MHz offset Resonat...
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Published in | 2007 European Microwave Integrated Circuit Conference pp. 112 - 114 |
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Main Authors | , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
01.10.2007
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Subjects | |
Online Access | Get full text |
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Summary: | A 100 GHz fixed-tuned oscillator was designed and fabricated using a 90 nm bulk CMOS process. Push-push mode was chosen to improve the power output. The oscillator exhibits -3 dBm output power at 101 GHz with 27 mW power consumption. The measured SSB phase noise is -85 dBc/Hz at 1 MHz offset Resonators are implemented with transmission lines to avoid the need of high quality capacitors and inductors. |
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ISBN: | 9782874870026 2874870021 |
DOI: | 10.1109/EMICC.2007.4412660 |