Effect of RRC on SOI MOSFET to improve the SCE

In this work, a two dimensional (2D) Rectangular recessed channel (RRC) metal oxide field effect transistor using silicon on insulator (SOI) is designed and simulated using ATLAS 2D device simulator. The effect of RRC-SOI on analog (DC) and radio frequency (RF) parameter is investigated and the sign...

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Bibliographic Details
Published in2017 Devices for Integrated Circuit (DevIC) pp. 536 - 540
Main Authors Mishra, S., Lenka, A. S., Mohanty, S. S., Bhanja, U., Mishra, G. P.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.03.2017
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Summary:In this work, a two dimensional (2D) Rectangular recessed channel (RRC) metal oxide field effect transistor using silicon on insulator (SOI) is designed and simulated using ATLAS 2D device simulator. The effect of RRC-SOI on analog (DC) and radio frequency (RF) parameter is investigated and the significance of this device over RRC MOSFET about short channel effect (SCE) is analyzed.
DOI:10.1109/DEVIC.2017.8074008