Effect of RRC on SOI MOSFET to improve the SCE

In this work, a two dimensional (2D) Rectangular recessed channel (RRC) metal oxide field effect transistor using silicon on insulator (SOI) is designed and simulated using ATLAS 2D device simulator. The effect of RRC-SOI on analog (DC) and radio frequency (RF) parameter is investigated and the sign...

Full description

Saved in:
Bibliographic Details
Published in2017 Devices for Integrated Circuit (DevIC) pp. 536 - 540
Main Authors Mishra, S., Lenka, A. S., Mohanty, S. S., Bhanja, U., Mishra, G. P.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.03.2017
Subjects
corner effect
Electric potential
Logic gates
MOSFET
Performance evaluation
Recessed channel
SCE
Silicon-on-insulator
SOI
Threshold voltage
Two dimensional displays
Online AccessGet full text

Cover

More Information
Summary:In this work, a two dimensional (2D) Rectangular recessed channel (RRC) metal oxide field effect transistor using silicon on insulator (SOI) is designed and simulated using ATLAS 2D device simulator. The effect of RRC-SOI on analog (DC) and radio frequency (RF) parameter is investigated and the significance of this device over RRC MOSFET about short channel effect (SCE) is analyzed.
DOI:10.1109/DEVIC.2017.8074008