Effect of RRC on SOI MOSFET to improve the SCE
In this work, a two dimensional (2D) Rectangular recessed channel (RRC) metal oxide field effect transistor using silicon on insulator (SOI) is designed and simulated using ATLAS 2D device simulator. The effect of RRC-SOI on analog (DC) and radio frequency (RF) parameter is investigated and the sign...
Saved in:
Published in | 2017 Devices for Integrated Circuit (DevIC) pp. 536 - 540 |
---|---|
Main Authors | , , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
01.03.2017
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | In this work, a two dimensional (2D) Rectangular recessed channel (RRC) metal oxide field effect transistor using silicon on insulator (SOI) is designed and simulated using ATLAS 2D device simulator. The effect of RRC-SOI on analog (DC) and radio frequency (RF) parameter is investigated and the significance of this device over RRC MOSFET about short channel effect (SCE) is analyzed. |
---|---|
DOI: | 10.1109/DEVIC.2017.8074008 |