Weak anti-localization behavior of high mobility 2D hole gas in a strained Ge QW heterostructure

We have measured the low temperature and low field MR of a high mobility Ge 2DHG. The resulting MR curves demonstrate WL-like behavior at temperatures below 2K with WAL-like behavior appearing between 3K and 12K. Evidence of WAL has not been previously observed in Ge. We believe this transition to b...

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Published in2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) pp. 111 - 112
Main Authors Foronda, J., Morrison, C., Myronov, M., Halpin, J. E., Rhead, S. D., Leadley, D. R.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2014
Subjects
Decision support systems
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Summary:We have measured the low temperature and low field MR of a high mobility Ge 2DHG. The resulting MR curves demonstrate WL-like behavior at temperatures below 2K with WAL-like behavior appearing between 3K and 12K. Evidence of WAL has not been previously observed in Ge. We believe this transition to be the result of a summation of WL and WAL effects in the main conduction channel and parallel conduction channel(s).This is a promising result for Ge as a possible channel for future spin-FETs.
ISBN:9781479954278
1479954276
DOI:10.1109/ISTDM.2014.6874644