Highly reliable and fast nonvolatile hybrid switching ReRAM memory using thin Al2O3 demonstrated at 54nm memory array

For the first time, very fast (10ns at even Reset) and high reliable (150°C 100h) ReRAM memory was demonstrated at 54 nm 256k bits array. Reset current successfully decreased up to 20uA using Al 2 O 3 which acts as a tunnel barrier and filament source in TiO 2 /Al 2 O 3 stack. From statistical analy...

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Bibliographic Details
Published in2011 Symposium on VLSI Technology - Digest of Technical Papers pp. 48 - 49
Main Authors Jaeyun Yi, Hyejung Choi, Seunghwan Lee, Jaeyeon Lee, Donghee Son, Sangkeum Lee, Sangmin Hwang, Seokpyo Song, Jinwon Park, Sookjoo Kim, Wangee Kim, Ja-Yong Kim, Sunghoon Lee, Jiwon Moon, Jinju You, Moonsig Joo, JaeSung Roh, Sungki Park, Sung-Woong Chung, Junghoon Lee, Sung-Joo Hong
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2011
Subjects
1T1R
Aluminum oxide
Arrays
bipolar
Reliability
Resistance
Resistive switching
Resistors
Switches
Very large scale integration
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Summary:For the first time, very fast (10ns at even Reset) and high reliable (150°C 100h) ReRAM memory was demonstrated at 54 nm 256k bits array. Reset current successfully decreased up to 20uA using Al 2 O 3 which acts as a tunnel barrier and filament source in TiO 2 /Al 2 O 3 stack. From statistical analysis, the possibility of increasing array size and the key factor of resistance distribution were investigated.
ISBN:9781424499496
1424499496
ISSN:0743-1562