Study on bottom-up Cu filling process for Through Silicon Via (TSV) metallization

In this study, stepwise current was used for TSV Cu electroplating. TSV with void defect and solid filled TSV showed different voltage behavior at low current density. Based on voltage behavior of stepwise current electroplating and linear current sweep, TSV Cu electroplating process was optimized a...

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Bibliographic Details
Published in2018 IEEE 20th Electronics Packaging Technology Conference (EPTC) pp. 767 - 770
Main Authors Hwang, Gilho, Hsiang-Yao, Hsiao, Wee, David Ho Soon
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.12.2018
Subjects
Electronics packaging
Filling
Microscopy
Silicon
Solids
Through-silicon vias
X-ray imaging
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Summary:In this study, stepwise current was used for TSV Cu electroplating. TSV with void defect and solid filled TSV showed different voltage behavior at low current density. Based on voltage behavior of stepwise current electroplating and linear current sweep, TSV Cu electroplating process was optimized and stable solid TSV filling was achieved without any defect.
DOI:10.1109/EPTC.2018.8654289