Enhanced performance of ZnO thin-film transistors with ZnO dual-active-layer

Thin-film transistors using reactive sputtering ZnO with metallic zinc target are fabricated in this work. The maximum processing temperature used is 150°C. The performance of TFTs with high/low-resistivity ZnO dual-active-layer grown at different O 2 /Ar flow rate ratio (0.75 and 0.8) is investigat...

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Bibliographic Details
Published in2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology pp. 1 - 3
Main Authors Shao-Juan Li, Xin He, De-Dong Han, Yi Wang, Lei Sun, Sheng-Dong Zhang
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.10.2012
Subjects
Argon
Morphology
Sputtering
Surface morphology
Thin film transistors
Zinc oxide
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Summary:Thin-film transistors using reactive sputtering ZnO with metallic zinc target are fabricated in this work. The maximum processing temperature used is 150°C. The performance of TFTs with high/low-resistivity ZnO dual-active-layer grown at different O 2 /Ar flow rate ratio (0.75 and 0.8) is investigated. The experiment results show that the surface properties of channel layer play an important role in controlling of the field effect mobility and threshold voltage. The best performance device is obtained with ZnO dual-active-layer, which has the best surface morphology and moderate grain size. The resulting TFT has a field effect mobility of 8.1 cm 2 /V·s, a threshold voltage of 5.6V, an on/off current ratio of more than 10 7 , and a subthreshold swing of 0.92 V/dec.
ISBN:9781467324748
1467324744
DOI:10.1109/ICSICT.2012.6467844